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TYPICAL PERFORMANCE CURVES
APT15GN120BDQ1 APT15GN120BDQ1(G)
APT15GN120BD_SDQ1(G) APT15GN120SDQ1
APT15GN120SDQ1(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
(B)
TO -2 47
D3PAK
(S)
C G E
* 1200V Field Stop
* Trench Gate: Low VCE(on) * Easy Paralleling
G
C
E
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT15GN120BD_SDQ1(G) UNIT Volts
1200 30 45 22 45 45A @ 1200V 195 -55 to 150
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 600A, Tj = 25C) MIN TYP MAX Units
1200 5.0 1.4
2 2
5.8 1.7 2.0
6.5 2.1
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C)
I CES I GES RGINT
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
200 TBD 120 N/A
A nA
7-2009 050-7598 Rev C
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT15GN120BD_SDQ1(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 15A TJ = 150C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 15A
4 5
MIN
TYP
MAX
UNIT
1200 65 50 9.0 90 5 55 45 10 9 150 110 410 730 950 10 9 170 185 475 1310 1300 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 15A RG = 4.3 7
55
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.64 1.18 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
7-2009 Rev C 050-7598
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
60
V
GE
APT15GN120BD_SDQ1(G)
60 15V IC, COLLECTOR CURRENT (A) 50 13V 40 12V 11V 10V 9V 10 0 8V 7V
= 15V
IC, COLLECTOR CURRENT (A)
50 40 TJ = 125C 30 TJ = 25C 20 TJ = -55C 10 0
30
20
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 2 4 6 8 10 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25C) 80 70 IC, COLLECTOR CURRENT (A) 60 50 40 TJ = 125C 30 20 10 0 0 4 8 12 16 20 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 8 6 4 2 0 0 20 40 60 80 GATE CHARGE (nC) 100
I = 15A C T = 25C
J
VCE = 240V VCE = 600V
TJ = -55C TJ = 25C
VCE =960V
FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 2.5 IC = 30A 2.0 1.5 IC = 7.5A 1.0 0.5 0 IC = 15A
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 IC = 15A
IC = 30A
IC = 7.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
8
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60
-50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
50
1.05
40
1.00
30
0.95
10 0 -50 Rev C 050-7598
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
7-2009
20
APT15GN120BD_SDQ1(G)
12 10 VGE = 15V 8 6 4 2 T = 25C, T =125C J J 0
RG = 4.3 L = 100 H VCE = 800V
200 td (OFF), TURN-OFF DELAY TIME (ns) 180 160 140 120 100 80 60 40
VCE = 800V 20 RG = 4.3 L = 100 H VGE =15V,TJ=25C VGE =15V,TJ=125C
td(ON), TURN-ON DELAY TIME (ns)
10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 16 14 12 tr, RISE TIME (ns) tf, FALL TIME (ns) 10 8 6 4 2 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 EON2, TURN ON ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 4.3
G
5
10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 300
RG = 4.3, L = 100H, VCE = 800V
0
5
RG = 4.3, L = 100H, VCE = 800V
250
200
TJ = 125C, VGE = 15V
150
TJ = 25 or 125C,VGE = 15V
100
TJ = 25C, VGE = 15V
50 0
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500 EOFF, TURN OFF ENERGY LOSS (J) 3000 2500 2000 1500 1000 500 0
TJ = 25C
V = 800V CE V = +15V GE R = 4.3
G
2500
TJ = 125C
TJ = 125C
2000
1500
1000
500
TJ = 25C
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 5000 SWITCHING ENERGY LOSSES (J) 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0
Eoff,15A Eoff,7.5A Eon2,7.5A Eon2,15A Eoff,30A
V = 800V CE V = +15V GE T = 125C
J
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3500 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 4.3
G
Eon2,30A
3000 2500 2000 1500 1000
Eoff,30A
Eon2,30A Eoff,15A Eon2,15A
7-2009
Rev C
500 0
Eon2,7.5A
Eoff,7.5A
050-7598
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
2,000 Cies 1,000 C, CAPACITANCE ( F) 500 IC, COLLECTOR CURRENT (A)
50 45 40 35 30 25 20 15 10 5
APT15GN120BD_SDQ1(G)
P
100 50 Coes Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.70 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 0.3 SINGLE PULSE 0.1 0.05 10-5 10-4
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz) 100
50
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.3
G
f max2 = Pdiss =
10 6
Pdiss - P cond E on2 + E off TJ - T C R JC
5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
050-7598
Rev C
7-2009
APT15GN120BD_SDQ1(G)
APT15DQ120
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
90% tr Collector Current 5% Collector Voltage
5%
10%
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90%
TJ = 125C
Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7598
Rev C
7-2009
TYPICAL PERFORMANCE CURVES
APT15GN120BD_SDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol Characteristic / Test Conditions Maximum Average Forward Current (TC = 127C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT15GN120BD_SDQ1(G) UNIT
15 29 110
TYP MAX UNIT Amps
STATIC ELECTRICAL CHARACTERISTICS 2.8 2.4 2.45
MIN TYP MAX UNIT ns Volts
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.7 0.80 0.5
Note:
21 240 260 3 290 960 6 130 1340 19 nC Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 25C
-
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
0.60
PDM
0.40
0.3
t1 t2
0.20 0 10-5
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
050-7598
Rev C
7-2009
APT15GN120BD_SDQ1(G)
60 trr, REVERSE RECOVERY TIME (ns) TJ = 175C IF, FORWARD CURRENT (A) 50 TJ = 125C 40 TJ = 25C 30 TJ = -55C 20 10 0 400 350 300 250 200 150 100 50 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 2500 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 800V
R
T = 125C J V = 800V
R
30A
15A 7.5A
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 800V
R
0
30A
2000
30A
20
1500 15A
15
1000 7.5A 500
10 7.5A
15A
5
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 trr Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 Qrr 0.4 trr IRRM Qrr
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10
Duty cycle = 0.5 T = 175C
J
0
0.2 0.0
5 0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
25
50
050-7598
Rev C
7-2009
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT10078BLL
APT15GN120BD_SDQ1(G)
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
Collector (Cathode) (Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector (Cathode) Emitter (Anode)
Heat Sink (Collector) and Leads are Plated
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7598
Rev C
7-2009
2.21 (.087) 2.59 (.102)
Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches)

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